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datasheet rev. 1.3 1 2008-01-09 smart low side power switch hitfet ? BTS3408G datasheet rev. 1.3 features ? logic level input compatible to 3v micro controllers esd protection thermal shutdown with auto restart overload protection short circuit protection over voltage protection open load detection (during off) current limitation direct parallel control of the inputs freeze functionality for multiplexing general fault flag very low standby quiescent current switching frequencies up to 50khz green product (rohs compliant) aec qualified application all kinds of resistive, inductive and ca pacitive loads in switching applications c compatible power switch for 12 v, 24 v and 42 v applications replaces electromechanical relays and discrete circuits line, stepper motor, lamp and relay driver general description the BTS3408G is a dual channel low-side s witch with d-mos output stages for driving resistive, capacitive and inductive loads. t he design is based on infineons smart power technology (spt) which allows bipolar, cmos and power d-mos devices on the same monolithic circuit. the BTS3408G is protected by embedde d protection functions and designed for automotive and industrial applications. it is especially suited for driving stepper motors and lines. type ordering code package hitfet ? BTS3408G on request pg-dso8-36
hitfet ? BTS3408G datasheet rev. 1.3 2 2008-01-09 figure 1 block diagram figure 2 pin configuration product summary parameter symbol value unit supply voltage v s 4.5 - 60 v continuous drain source voltage v ds 60 v on-state resistance r ds(on) 550 m ? current limitation i d(lim) 1a nominal output current (individual channel) i d(nom) 0.55 a clamping energy e as 800 mj bts 3408 logic out2 output stage protection open load @ off short circuit over temp normal function vs protection and diagnosis control output control freeze functio- nality open drain status feedback fault gnd out1 in1 in2 ena v bb load 1 fault in1 in2 ena v s out1 gnd out2 2 3 4 8 7 6 5
datasheet rev. 1.3 3 2008-01-09 hitfet ? BTS3408G pin definitions and functions pin symbol function 1fault general fault flag ; see table 2 for operation mode. 2in1 input 1 ; input of channel 1; has an internal pull down; ttl/ cmos compatible input. 3in2 input 2 ; input of channel 2; has an internal pull down; ttl/ cmos compatible input. 4ena enable/freeze ; has an internal pull down; device is enabled when voltage is higher then 1.2 vo lts; if the voltage is below 1.7 volts the output is freezed, inpu t signals will be ignored; if the voltage is above 2 volts input signals will be output ; see table 1 for detailed information. 5out2 output 2 ; output of d-mos stage 2. 6gnd ground. 7out1 output 1 ; output of d-mos stage 1. 8 v s power supply .
hitfet ? BTS3408G datasheet rev. 1.3 4 2008-01-09 circuit description logic supply the logic is supplied with 4.5 up to 60 volt by the v s pin. if v s falls below max. 4.5 volts the logic is shut down and the output stages are switched off. direct inputs ena the ena/freeze input can be used to enable and/or to freeze the output control of the ic or to cut off the complete ic. by pulling the ena input to low, i.e. applying a voltage v enal , the ic is in disable mode. the power stages are switched off and the current consumption is reduced to i s(stby) . by applying a voltage v enafz , the ic is in freeze mode. the output signals will remain in their former state. all input signals will be ignored. by pulling the input to high, the ic is in enable mode. all input signals are output. the ena - pin has an internal pull-down. in1 / in2 each output is independently controlled via the respective input pin. the input pins are high active. if the common enable pin is high, the individual input signals are output. the input pins have an internal pull-down. table 1 functional table v ena mode in1 in2 in1(-1) in2(-1) out1 out2 comment 0.8v disable x 1) 1) x = not relevant x 1) x 1) x 1) l l all outputs off 1.2 .. 1.7v freeze x 1) x 1) l l l l former output state 1.2 .. 1.7v freeze x 1) x 1) l h l h former output state 1.2 .. 1.7v freeze x 1) x 1) h l h l former output state 1.2 .. 1.7v freeze x 1) x 1) h h h h former output state 2.0v enable l l x 1) x 1) l l input is output 2.0v enable l h x 1) x 1) l h input is output 2.0v enable h l x 1) x 1) h l input is output 2.0v enable h h x 1) x 1) h h input is output
datasheet rev. 1.3 5 2008-01-09 hitfet ? BTS3408G power stages each output is protected by embedded protection functions. in the event of an overload or short to supply, the current is interna lly limited. the current limit is set to i d(lim) . if this operation leads to an overtemperature condit ion, a second protection level (about 165 c) will turn the effected output into a pwm-mode (selective thermal shutdown with restart) to prevent critical ch ip temperatures. the temperatur e hysteresis is typically 10k. zener clamping is implemented to limit volta ges at the power transistors when inductive loads are switched off. diagnostic the general fault pin is an open drain output. the fault pin is low active. it signals fault conditions of any of the two output stages. by doi ng so, single and/or dual fault conditions can be monitored. single fault conditions can be assigned. fault distinction open load / short to ground is recognized du ring off-state. overtemperature as a result of an overload or short to battery can only arise during on-state. if there is only one fault at a time, it is possible to distinguish which channel is affected with which fault. . table 2 diagnostic table operating condition ena in x out x fault standby l x 1) 1) x = not relevant off h normal function h h on h over temperature h h off 2) 2) selective thermal shutdown for eac h channel at overtemperature l open load / short to ground h l off l
hitfet ? BTS3408G datasheet rev. 1.3 6 2008-01-09 absolute maximum ratings 1) t j = -40c to 150c , unless otherwise specified parameter symbol values unit remarks supply voltage v s +4.5 .. +60 v ? drain source voltage (out1, out2) v ds -0.3 .. +60 v ? input voltage (in1, in2, ena) v in -0.3 ? +7 v ? continuous input current v in >7v i in 1ma? fault output voltage v fault -0.3 ? +7 v ? operating temperature range storage temperature range t j t stg -40 ? +150 -55 ? +150 c c ? power dissipation (dc) 2) p tot 0.88 w ? nominal load current 2) one channel active both channel active i d(nom) 0.55 0.45 a v ds 0.5v, t j 150c, t a =85c, v in =5v unclamped single pulse inductive energy one channel active e as 800 mj i d =0.7a, t j(start) =25 c e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 v esd 2000 v ? thermal resistance junction soldering point r thjs 10 k/w ? junction - ambient @ min. footprint junction - ambient @ 6cm2 cooling area 2) r thja 185 142 k/w ? 1) stresses above those listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2) device on epoxy pcb 40 mm 40 mm 1.5 mm with 6 cm 2 copper area for pin 4 connection.
datasheet rev. 1.3 7 2008-01-09 hitfet ? BTS3408G electrical characteristics v s = 4.5 to 18v; t j = -40 to 150 c; unless otherwise specified parameter sym- bol limit values unit test conditions min. typ. max. power supply supply voltage v s 4.5 ? 60 v ? supply current in enable mode i s(on) ? 1.5 4 ma ena=high, out1=out2=on supply current in standby mode 1) i s(stby) ??16 aena=low power outputs drain source clamp voltage v ds(az) 60 ? 75 v i d = 1 ma output leakage current 2) i dss ?15 aena=low, in=low, v ds = 60 v output pull down current i pd(ol) 50 100 200 a ena=high, in=low, v ds = 42 v on-state resistance t j = 25 c t j = 150 c r ds(on) ? ? 480 800 550 1000 m ? i d = 0.2 a, v s = 5 v current limit i d(lim) 11.52a? turn-on time in=high to 90% i d : t on ?28 s r l =2k ? , v bb =12v, v s =5v turn-off time in=low to 10% i d : t on ?28 s r l =2k ? , v bb =12v, v s =5v digital inputs (in1, in2, ena) input ?low? voltage in1, in2: ena: v inl v enal -0.3 -0.3 ? ? 0.8 0.8 v? ena voltage for ?freeze? functionality v enafz 1.2 ? 1.7 v ?
hitfet ? BTS3408G datasheet rev. 1.3 8 2008-01-09 input ?high? voltage in1, in2: ena: v inh v enah 2.0 2.0 ? ? ? ? v? input voltage hysteresis v inhys ?300?mv? input pull down current in1, in2: ena: i inpd i enapd 20 20 50 50 100 100 a? digital output (fault ) output ?low? voltage v fltl ??0.4v i fltl =1.6ma, diagnostic functions open load / short to ground detection voltage v ds(ol) 0.5*v s 0.7*v s 0.9*v s v? fault filter time for open load t filter(ol) 30 100 200 s v s =5v protection functions 3) thermal overload trip temperature t jt 150 165 180 c? thermal hysteresis ? t jt ?10? ? unclamped single pulse inductive energy one channel active, t j(start) =25 c both channel active, t j(start) =25 c one channel active, t j(start) =150 c both channel active, t j(start) =150 c e as 800 550 240 240 mj i d =0.7 a 1) see also diagram 4 on page 14. 2) see also diagram 5 on page 14. 3) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are cons idered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. electrical characteristics (cont?d) v s = 4.5 to 18v; t j = -40 to 150 c; unless otherwise specified parameter sym- bol limit values unit test conditions min. typ. max.
datasheet rev. 1.3 9 2008-01-09 hitfet ? BTS3408G emc-characteristics the following emc-characteristics outline t he behavior of typical devices. they are not part of any production test. table 3 test conditions parameter symbol value unit remark temperature t a 23 5 c ? supply voltage v bb 13.5 v ? input voltage (ena, in1, in2) v inx 5v? load r l1 , r l2 27 ? ohmic operation mode pwm dc ? ? ? ? f inx =100hz, d =0.5 on / off dut specific all tests with ena=high fast electrical transients acc. to iso 7637 test 1) pulse 1) the test pulses are applied at v bb max. test level test result pulse cycle time and generator impedance v s and out x stressed out x stressed on off on off 1 -200v e(-120v) e(-120v) c c 500ms ; 10 ? 2 +200v e(+120v e(+120v c c 500ms ; 10 ? 3a-200vcccc 100ms ; 10 ? 3b+200vcccc 100ms ; 10 ? 4-7vcccc 0.01 ? 5 175v e(50v) e(65v) e(70v) e(75v) 400ms ; 2 ? definition of fu nctional status class content c all functions of the device are per formed as designed after exposure to disturbance. e one or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. the value after the character shows the limit.
hitfet ? BTS3408G datasheet rev. 1.3 10 2008-01-09 figure 3 test circuit for iso pulse 3408 out2 vs fault gnd out1 in1 in2 ena v bb r l1 r l2 13.5v stress also for v s pulse
hitfet ? BTS3408G datasheet rev. 1.3 11 2008-01-09 conducted emissions acc. iec 61967-4 (1 ? /150 ? method) typ. out x emissions at pwm-mode with 150 ? -matching network figure 4 test circui t for conducted emission 1) conducted susceptibility acc. i47a/658/cd iec 62132-4 (direct power injection) direct power injection: forward power cw failure criteria: amplitude or frequency variation max. 10% at out typ. out x susceptibility at dc-on/off and at pwm figure 5 test circui t for conducted susceptibility 2) 1) for defined decoupling and high reproducibility a defined choke (5h at 1 mhz) is inserted between vbb and out-pin. -20 -10 0 10 20 30 40 50 60 70 80 90 100 0,1 1 10 100 1000 f / mhz dbv noise out1 out2 150ohm class1 150ohm class6 150 ? / 8-h 150 ? / 13-n 3408 out2 vs fault gnd out1 in1 in2 ena v bb r l1 r l2 5v 150 ? -network 150 ? -network 2) broadband artificial network (short ban) consists of the same choke (5h at 1 mhz) and the same 150ohm-matching network as for emission measurement for defined decoupling and high reproducibility. 0 5 10 15 20 25 30 35 40 1 10 100 1000 f / mhz dbm limit out2, on out2, off out2, pwm 3408 out2 vs fault gnd out1 in1 in2 ena v bb r l1 r l2 hf b a n 5v b a n hf
hitfet ? BTS3408G datasheet rev. 1.3 12 2008-01-09 terms figure 6 input circuit (esd protection) esd zener diodes are not designed for dc current. figure 7 inductive and over voltage output clamp figure 8 application circuit i in1 v flt i s out2 vs fault gnd out1 in1 in2 ena v in1 v s v in2 v ena v ds2 v ds1 i d1 i d2 i in2 i ena v bb i flt source drain v ds i d v az power dmos load 3408 out2 vs fault gnd out1 in1 in2 ena v bb uc v cc gnd int px.1 px.2 py.1 line
hitfet ? BTS3408G datasheet rev. 1.3 13 2008-01-09 timing diagrams figure 9 switching a resistive load figure 10 switchin g an inductive load figure 11 short circuit characteristics 1. max. allowable power dissipation p tot = f (t amb ) 2. on-state resistance r on = f (t j ); i d = 0.2 a; v s = 5 v t v dsx t i dx t on t off in x ena 0.9*i d 0.1*i d t v dsx in x t i dx v bb v ds(az) ena t ? jx i dx in x ena t fault thermal hysteresis 0 0,2 0,4 0,6 0,8 1 -50 -25 0 25 50 75 100 125 150 p tot w t amb c min. footprint 6cm2 0 100 200 300 400 500 600 700 800 900 1000 -50 -25 0 25 50 75 100 125 150 r on m ? t j c max. typ.
hitfet ? BTS3408G datasheet rev. 1.3 14 2008-01-09 3. typ. short circuit current i d(lim) = f (t j ) 4. typ. supply current in standby mode i s(stby) = f (t j ); v s = 5 v 5. typ. output leakage current i dss = f (t j ); v s = 18 v ; v ds = 60 v 0 0,5 1 1,5 2 -50 -25 0 25 50 75 100 125 150 i d(lim ) a t j c typ. 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 i s(stby) a t j c typ. 0 0,4 0,8 1,2 1,6 2 -50 -25 0 25 50 75 100 125 150 i dss a t j c typ.
datasheet rev. 1.3 15 2008-01-09 hitfet ? BTS3408G
hitfet ? BTS3408G datasheet rev. 1.3 16 2008-01-09 package outline figure 12 pg-dso8-36 (plastic green dual small outline package) green product (rohs compliant) to meet the world-wide customer requireme nts for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). +0.06 0.19 0.35 x 45? 1) -0.2 4 c 8 max. 0.64 0.2 6 0.25 0.2 8x m c 1.27 +0.1 0.41 0.2 m a -0.06 1.75 max. (1.45) 0.07 0.175 b 8x b 2) index marking 5 -0.2 1) 4 1 85 a 1) does not include plastic or metal protrusion of 0.15 max. per side 2) lead width can be 0.61 max. in dambar area gps01181 0.1 sorts of packing package outlines for tubes, trays etc. are contained in our dimensions in mm smd = surface mounted device
datasheet rev. 1.3 17 2008-01-09 hitfet ? BTS3408G revision history version date changes rev. 1.3 2008-01-09 changed package ou tline drawing, updated package name rev. 1.2 2007-06-15 released automotive green version package parameter (humidity and climatic) removed in maximum ratings aec icon added rohs icon added green product (rohs-compliant) added to the feature list aec stress test qualificatio n added to the feature list package information updated to green green explanation added removed order number rev. 1.1 2005-10-10 released production version
hitfet ? BTS3408G datasheet rev. 1.3 18 2008-01-09 edition 2008-01-09 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints gi ven herein, any typical values stated herein and/or any information regarding the application of the device, in fineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-supp ort devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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